Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node-Reference-Cited by-同舟云学术

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Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node

Published:2018 Issue: Volume:6 Page:841-848
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Yao Jiaxin^ORCID,Yin Huaxiang^ORCID,Wang Wenwu,Li Jun^ORCID,Luo Kun,Yu Jiahan,Zhang Qingzhu^ORCID,Hou Zhaozhao^ORCID,Gu Jie,Yang Wen,Wu Zhenhua^ORCID

Funder

National Natural Science Foundation of China

NSFFPC

FRFCU

MOST

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8232486/08417409.pdf?arnumber=8417409

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