Effects of Ion-Induced Displacement Damage on GaN/AlN MEMS Resonators-Reference-Cited by-同舟云学术

Effects of Ion-Induced Displacement Damage on GaN/AlN MEMS Resonators

Published:2022-03 Issue:3 Volume:69 Page:216-224
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Sui Wen¹^ORCID,Zheng Xu-Qian¹^ORCID,Lin Ji-Tzuoh²^ORCID,Lee Jaesung¹^ORCID,Davidson Jim L.³^ORCID,Reed Robert A.³^ORCID,Schrimpf Ronald D.³^ORCID,Alphenaar Bruce W.²^ORCID,Alles Michael L.³,Feng Philip X.-L.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, FL, USA

2. Department of Electrical and Computer Engineering, University of Louisville, Louisville, KY, USA

3. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA

Funder

Defense Threat Reduction Agency (DTRA) through the Basic Scientific Research Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9735177/09682706.pdf?arnumber=9682706

Reference33 articles.

1. Detection of Interstitial Ga in GaN

2. Luminescence properties of defects in GaN

3. First-principles calculations for defects and impurities: Applications to III-nitrides

4. Gamma Irradiation Effects on Surface-Micromachined Polysilicon Resonators

5. MEMS Reliability Review

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