Detection of Interstitial Ga in GaN
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.85.2761/fulltext
Reference17 articles.
1. Defects in and Apllications of III-V Nitride Semiconductors
2. N vacancies in AlxGa1−xN
3. Atomic geometry and electronic structure of native defects in GaN
4. Theory of point defects in GaN, AlN, and BN: Relaxation and pressure effects
Cited by 117 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review;Microelectronics Reliability;2024-08
2. Radiation-induced defects in the InGaN/GaN superlattice structure;Physica Scripta;2024-05-16
3. Temperature Effect on GaN Threshold Displacement Energy Under Low‐Energy Electron Beam Irradiation;Advanced Electronic Materials;2024-04-04
4. Incorporation of total ionizing dose effects into a compact model for p-GaN gate high electron mobility transistors;Physica Scripta;2024-01-25
5. Temperature-Dependent Cascades in Irradiated In x Ga1-x N (x < 0.34) Materials;IEEE Transactions on Nuclear Science;2023-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3