10 A/950 V switching of GaN-channel HFETs with non-doped AlN buffer
Author:
Affiliation:
1. Ferdinand-Braun-Institut gGmbH (FBH),Berlin,Germany,12489
Funder
Federal Ministry of Education and Research in Germany (BMBF)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147681.pdf?arnumber=10147681
Reference11 articles.
1. AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts
2. Lateral and vertical power transistors in GaN and Ga 2 O 3
3. High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates
4. Self-Heating in GaN Transistors Designed for High-Power Operation
5. Punchthrough-Voltage Enhancement of AIGaN/GaN HEMTs Using AIGaN Double-Heterojunction Confinement;bahat-treidel;IEEE Transactions on Electron Devices,2008
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2. 1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate;IEEE Electron Device Letters;2024-06
3. Simulation Study of Aluminum Nitride TrenchFETs with Polarization‐Induced Doping;physica status solidi (a);2024-04-08
4. Comparison of the static characteristics of GaN HEMTs with different gate technologies and the impact on modeling;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04
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