Demonstration of 3.5kV SiC Deep-Implanted Superjunction Didoes
Author:
Affiliation:
1. GE Research,Niskayuna,NY,USA
2. Rensselaer Polytechnic Institute,Troy,NY,USA
Funder
U.S. Department of Energy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147432.pdf?arnumber=10147432
Reference9 articles.
1. 4.5kV SiC Charge-Balanced MOSFETs with Ultra-Low On-Resistance
2. Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth
3. Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode
4. Ultra-Low Specific on-Resistance Achieved in 3.3 kV-Class SiC Superjunction MOSFET
5. First Demonstration of Dynamic Characteristics for SiC Superjunction MOSFET Realized using Multi-epitaxial Growth Method
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1. Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV;Materials Science in Semiconductor Processing;2024-08
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