Method to Study Dynamic Depletion Behaviors in High-Voltage ($BV=1.4\ \text{kV}$) p-GaN Gate HEMT on Sapphire Substrate
Author:
Affiliation:
1. School of Integrated Circuits, Peking University,Beijing,China
2. School of Physics, Peking University,Beijing,China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147490.pdf?arnumber=10147490
Reference26 articles.
1. Transient Measurement of GaN HEMT Drift Region Potential in the High Power State
2. 2DEG Retraction and Potential Distribution of GaN–on–Si HEMTs Investigated Through a Floating Gate Terminal
3. Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs
4. An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps
5. The 1.6-kV AlGaN/GaN HFETs
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