Transient Measurement of GaN HEMT Drift Region Potential in the High Power State-Reference-Cited by-同舟云学术

Transient Measurement of GaN HEMT Drift Region Potential in the High Power State

Published:2021-04 Issue:4 Volume:42 Page:557-560
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hwang Injun^ORCID,Chong Soogine,Park Younghwan,Hwang Sun-Kyu,Kim Boram,Kim Joonyong,Oh Jaejoon,Park Jun Hyuk,Shin Dong-Chul,Yu Min Chul,Shin Jai Kwang,Kim Jongseob

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9385573/09351994.pdf?arnumber=9351994

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Method to Study Dynamic Depletion Behaviors in High-Voltage ($BV=1.4\ \text{kV}$) p-GaN Gate HEMT on Sapphire Substrate;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

2. Exceptional Repetitive-Short-Circuit Robustness of Vertical GaN Fin-JFET at High Voltage;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

3. A Pathway to Improve the Reliability of p-GaN Gate HEMTs through Buffer Hole Accumulation;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

4. On the Channel Hot-Electron’s Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2021-10

5. Estimation of Short Circuit Capability of GaN HEMTs Using Transient Measurement;IEEE Electron Device Letters;2021-08