Single event upset sensitivity of medium-energy proton in Xilinx 16nm MPSoC-Reference-Cited by-同舟云学术

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Single event upset sensitivity of medium-energy proton in Xilinx 16nm MPSoC

Published:2023-05-24 Issue: Volume: Page:1-4
ISSN:
Container-title:2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED)
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Author:

Li Yonghong¹,Liu Yongneng¹,Bai Yurong¹,Lyu Wei²,He Chaohui¹,Yang Weitao³,Li Pei¹,Li Ning¹,Li Yang⁴,Wang Baichuan²,Zhang Xiaodong⁵

Affiliation:

1. Xi’an Jiaotong Unviersity,Xi’an,China

2. Northwest Institute of Nuclear Technology,Xi’an,China

3. Xidian Univeisity,Xi’an,China

4. Jiaotong Unviersity,Xi’an,China

5. National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment,Harbin,China

Funder

Harbin Institute of Technology

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10389810/10390725/10390895.pdf?arnumber=10390895

Reference14 articles.

1. The ionizing radiation environment in space and its effects

2. Soft-error induced system-failure rate analysis in an SoC

3. Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

4. Prediction of proton-induced SEE error rates for the VATA160 ASIC

5. Single event effects sensitivity of low energy proton in Xilinx Zynq-7010 system-on chip

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