Prediction of proton-induced SEE error rates for the VATA160 ASIC-Reference-Cited by-同舟云学术

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Prediction of proton-induced SEE error rates for the VATA160 ASIC

Published:2016-12-01 Issue:1 Volume:28 Page:
ISSN:1001-8042
Container-title:Nuclear Science and Techniques
language:en
Short-container-title:NUCL SCI TECH

Author:

Xi Kai,Jiang Di,Gao Shan-Shan,Kong Jie,Zhao Hong-Yun,Yang Hai-Bo,Liu Tian-Qi,Wang Bin,Ye Bing,Liu Jie

Publisher

Springer Science and Business Media LLC

Subject

Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://link.springer.com/content/pdf/10.1007/s41365-016-0153-z.pdf

Reference25 articles.

1. J. Chang, J.H. Adams, H.S. Ahn et al., An excess of cosmic ray electrons at energies of 300–800 GeV. Nature 456, 362–365 (2008). doi: 10.1038/nature07477

2. C.Q. Feng, D.L. Zhang, J.B. Zhang et al., Design of the readout electronics for the BGO calorimeter of DAMPE mission. IEEE Trans. Nucl. Sci. 62, 3117–3125 (2015). doi: 10.1109/TNS.2015.2479091

3. S.S. Gao, C.Q. Feng, D. Jiang et al., Radiation tolerance studies on the VA32 ASIC for DAMPE BGO calorimeter. Nucl. Sci. Tech. 25, 010402 (2014). doi: 10.13538/j.1001-8042/nst.25.010402

4. T. Tong, X.H. Wang, Z.G. Zhang et al., Effectiveness and failure modes of error correcting code in industrial 65 nm CMOS SRAMs exposed to heavy ions. Nucl. Sci. Tech. 25, 010405 (2014). doi: 10.13538/j.1001-8042/nst.25.010405

5. Z.G. Zhang, J. Liu, M.D. Hou et al., Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout. Nucl. Sci. Tech. 26, 050404 (2015). doi: 10.13538/j.1001-8042/nst.26.050404

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