Effect of (111) Surface Ratio on the Bonding Quality of Cu-Cu Joints
Author:
Affiliation:
1. National Yang Ming Chiao Tung University,Institute of Pioneer Semiconductor Innovation,Hsinchu,Taiwan,300093
2. National Yang Ming Chiao Tung University,Department of Materials Science and Engineering,Hsinchu,Taiwan,300093
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10564841/10564831/10564991.pdf?arnumber=10564991
Reference13 articles.
1. Precipitation of large Ag3Sn intermetallic compounds in SnAg2.5 microbumps after multiple reflows in 3D-IC packaging
2. Non-destructive Observation of Void Formation Due to Electromigration in Solder Microbump by 3D xray
3. Novel Cu/SiCN surface topography control for 1 μm pitch hybrid wafer-to-wafer bonding
4. SoIC for Low-Temperature, Multi-Layer 3D Memory Integration
5. Ultra High Density Low Temperature SoIC with Sub-0.5 μm Bond Pitch
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