Thin-base bipolar transistor fabrication using gas immersion laser doping
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/55/1379/00031740.pdf?arnumber=31740
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3. Ultrafast and direct imprint of nanostructures in silicon;Nature;2002-06
4. In situ boron incorporation and activation in silicon carbide using excimer laser recrystallization;Applied Physics Letters;1999-05-31
5. Shallow junction doping technologies for ULSI;Materials Science and Engineering: R: Reports;1998-10
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