In situ boron incorporation and activation in silicon carbide using excimer laser recrystallization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123347
Reference18 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
3. Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC
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