Modeling of N<tex>$_2$</tex>–H<tex>$_2$</tex>Capacitively Coupled Plasma for Low-k Material Etching
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Condensed Matter Physics,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx5/27/29037/01308481.pdf?arnumber=1308481
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Inelastic N$$_2$$+H$$_2$$ collisions and quantum-classical rate coefficients: large datasets and machine learning predictions;The European Physical Journal D;2023-07
2. Simulation-aided design of very-high-frequency excited nitrogen plasma confinement using a shield plate;Journal of Vacuum Science & Technology B;2019-11
3. Current status and nature of high-frequency electronegative plasmas: basis for material processing in device manufacturing;Japanese Journal of Applied Physics;2019-11-01
4. Spatial distribution study of a nitrogen plasma in an ion-filtered inductively coupled plasma used to grow GaN films;Journal of Physics D: Applied Physics;2019-07-22
5. A volume-averaged model of nitrogen–hydrogen plasma chemistry to investigate ammonia production in a plasma-surface-interaction device;Plasma Physics and Controlled Fusion;2018-06-04
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