A Novel Model of the Aging Effect on the ON-State Resistance of SiC Power MOSFETs for High-Accuracy Package-Related Aging Evaluation
Author:
Affiliation:
1. Tsinghua University, Beijing, China
2. GE Global Research, Niskayuna, NY, USA
Funder
National Key R&D Program of China
Shandong Province Key R&D Program
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Link
http://xplorestaging.ieee.org/ielx7/41/10091710/09917349.pdf?arnumber=9917349
Reference28 articles.
1. A Novel Bond Wire Fault Detection Method for IGBT Modules Based on Turn-on Gate Voltage Overshoot
2. Remaining Useful Lifetime Estimation for Thermally Stressed Power MOSFETs Based on on-State Resistance Variation
3. Impact of Solder Degradation on VCE of IGBT Module: Experiments and Modeling
4. In Situ Condition Monitoring of High-Voltage Discrete Power MOSFET in Boost Converter Through Software Frequency Response Analysis
5. Aging Precursor Identification and Lifetime Estimation for Thermally Aged Discrete Package Silicon Power Switches
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