A 4-kB 500-MHz 4-T CMOS SRAM using low-V/sub THN/ bitline drivers and high-V/sub THP/ latches

Author:

Chua-Chin Wang ,Yih-Long Tseng ,Hon-Yuan Leo ,Hu R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A 266.7 TOPS/W Computing-in Memory Using Single-Ended 6T 4-kb SRAM in 16-nm FinFET CMOS Process;2024 IEEE 6th International Conference on AI Circuits and Systems (AICAS);2024-04-22

2. A 1.0 fJ energy/bit single‐ended 1 kb 6T SRAM implemented using 40 nm CMOS process;IET Circuits, Devices & Systems;2023-01-10

3. A 40-nm CMOS Multifunctional Computing-in-Memory (CIM) Using Single-Ended Disturb-Free 7T 1-Kb SRAM;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2021-12

4. SRAM-Based Computation in Memory Architecture to Realize Single Command of Add-Multiply Operation and Multifunction;2021 IEEE International Symposium on Circuits and Systems (ISCAS);2021-05

5. 67.5-fJ Per Access 1-kb SRAM Using 40-nm Logic CMOS Process;2021 IEEE International Symposium on Circuits and Systems (ISCAS);2021-05

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