Utilizing Reverse Short-Channel Effect for Optimal Subthreshold Circuit Design

Author:

Tae-Hyoung Kim ,Keane J.,Hanyong Eom ,Kim C.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Cited by 31 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Low-Power Variation-Tolerant 7T SRAM With Enhanced Read Sensing Margin for Voltage Scaling;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2024-08

2. A Subthreshold Layout Strategy for Faster and Lower Energy Complex Digital Circuits;Journal of Low Power Electronics and Applications;2022-08-02

3. An Ultralow-Power 65-nm Standard Cell Library for Near/Subthreshold Digital Circuits;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2022-05

4. ULV and ULP Operational Amplifiers for Active-RC Filters;Ultra-low Voltage Low Power Active-RC Filters and Amplifiers for Low Energy RF Receivers;2021-10-08

5. Design of Low Leakage 9T SRAM Cell with Improved Performance for Ultra-Low Power Devices;Journal of Circuits, Systems and Computers;2021-08-19

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