Self-consistent Compact Modeling of First- and Third Quadrant I–V behavior in SiC MOSFETs
Author:
Affiliation:
1. Macquarie University,School of Engineering,Sydney,Australia
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9908144/9907765/09908186.pdf?arnumber=9908186
Reference13 articles.
1. Analytical Model for the Influence of the Gate-Voltage on the Forward Conduction Properties of the Body-Diode in SiC-MOSFETs
2. Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior
3. Analysis and Modeling of Temperature Dependence of I-V behavior in Silicon Carbide MOSFETs
4. How to (and how not to) write a compact model in Verilog-A
5. Study of bi-directional buck-boost converter topologies for application in electrical vehicle motor drives
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