Analytical Model for the Influence of the Gate-Voltage on the Forward Conduction Properties of the Body-Diode in SiC-MOSFETs-Reference-Cited by-同舟云学术

Analytical Model for the Influence of the Gate-Voltage on the Forward Conduction Properties of the Body-Diode in SiC-MOSFETs

Published:2018-06 Issue: Volume:924 Page:901-904
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Huerner Andreas¹,Heckel Thomas¹,Endruschat Achim¹,Erlbacher Tobias¹^ORCID,Bauer Anton J.¹,Frey Lothar¹

Affiliation:

1. Fraunhofer Institute for Integrated Systems and Device Technology

Abstract

In this study, the influence of the gate-source voltage on the forward conduction properties of the body-diode in SiC-MOSFETs is demonstrated experimentally and analyzed by numerical simulations. Thereby, it can be figured out that the conduction properties of the body-diode strongly depend on the operational state of the MOS-capacitor. In depletion case, the current via the body-diode is dominant, whereby in accumulation and inversion mode the current mainly flows through the MOS-channel.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.924.901.pdf

Reference4 articles.

1. T. Kimoto, J. Suda, Y. Yonezawa, K. Asano, K. Fukuda and H. Okumura, Progress in ultrahigh-voltage SiC devices for future power infrastructure,, 2014 IEEE International Electron Devices Meeting, San Francisco, CA, 2014, p.2.5.1-2.5.4.

2. G. Wang, X. Huang, J. Wang, T. Zhao, S. Bhattacharya and A. Q. Huang, Comparisons of 6.5kV 25A Si IGBT and 10-kV SiC MOSFET in Solid-State Transformer application,, 2010 IEEE Energy Conversion Congress and Exposition, Atlanta, GA, 2010, pp.100-104.

3. S. Madhusoodhanan et al., Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications,, 2012 IEEE Energy Conversion Congress and Exposition (ECCE), Raleigh, NC, 2012, pp.310-317.

4. V. Pala et al., Physics of bipolar, unipolar and intermediate conduction modes in Silicon Carbide MOSFET body diodes,, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, 2016, pp.227-230.

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First results on 1.2 kV SiC MOSFET body diode robustness tests;Microelectronics Reliability;2023-12

2. Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

3. Self-consistent Compact Modeling of First- and Third Quadrant I–V behavior in SiC MOSFETs;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04

4. Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior;IEEE Transactions on Power Electronics;2021-10

5. The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFET;2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2021-08-25