In Situ Monitoring Technique of Self-Heating in Bulk MOSFETs at Cryogenic Temperatures using Subthreshold Current-Reference-Cited by-同舟云学术

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In Situ Monitoring Technique of Self-Heating in Bulk MOSFETs at Cryogenic Temperatures using Subthreshold Current

Published:2022-07-04 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Latin American Electron Devices Conference (LAEDC)
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Author:

Ichikawa Masayuki¹,Tanaka Takahisa²,Uchida Ken²,Miyao Tomohisa²,Tada Munehiro³,Ishikuro Hiroki¹

Affiliation:

1. Keio University,Department of Electronics and Electrical Engineering,Yokohama,Japan

2. The University of Tokyo,Department of Materials Engineering,Tokyo,Japan

3. Nanobridge Semiconductor, Inc.,Tsukuba,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9908144/9907765/09908242.pdf?arnumber=9908242

Reference7 articles.

1. Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

2. Self-heating characterization of FinFET SOI devices using 2D time resolved emission measurements

3. Self-Heating Investigation in SOI MOSFET Structures with High Thermal Conductivity Buried Insulator Layers

4. Self-Heating Effect in a 65 nm MOSFET at Cryogenic Temperatures

5. Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K

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