Thermodynamic and Kinetic Analysis of Hydrogen Sensing in Pt/AlGaN/GaN Schottky Diodes at High Temperatures
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx5/7361/4529162/04529218.pdf?arnumber=4529218
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1. Low concentration hydrogen detection properties of metal-insulator-semiconductor AlGaN/GaN HEMT sensor;Sensors and Actuators B: Chemical;2023-10
2. A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses;Journal of Materials Chemistry C;2023
3. Temperature dependence of sensing properties of hydrogen-sensitive extended-base heterojunction bipolar transistors;International Journal of Hydrogen Energy;2022-11
4. Heterojunction bipolar transistors with a planar‐type extended base as a hydrogen‐sensitive sensor;Electronics Letters;2022-09-21
5. A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications;Measurement;2021-12
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