Heterojunction bipolar transistors with a planar‐type extended base as a hydrogen‐sensitive sensor-Reference-Cited by-同舟云学术

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Heterojunction bipolar transistors with a planar‐type extended base as a hydrogen‐sensitive sensor

Published:2022-09-21 Issue:22 Volume:58 Page:837-839
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electronics Letters

Author:

Huang Chia‐Hua¹,Tan Shih‐Wei²,Lo Hao³,Lo Chieh³,Lour Wen‐Shiung²

Affiliation:

1. Department of Electrical Engineering National Dong Hwa University Hualien Taiwan

2. Department of Electrical Engineering National Taiwan Ocean University Keelung Taiwan

3. Graduate Institute of Electronics Engineering National Taiwan University Taipei Taiwan

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/ell2.12614

Reference9 articles.

1. A hydrogen‐sensitive Pd‐gate MOS transistor

2. Hydrogen sensing performance of a Pd nanoparticle/Pd film/GaN-based diode

3. Comparative study of hydrogen sensing characteristics of a Pd/GaN Schottky diode in air and N2 atmospheres

4. Thermodynamic and Kinetic Analysis of Hydrogen Sensing in Pt/AlGaN/GaN Schottky Diodes at High Temperatures

5. Mechanism of Hydrogen Sensing by AlGaN/GaN Pt-Gate Field Effect Transistors: Magnetoresistance Studies

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