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NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors

  • Published:2016-04 Issue:2 Volume:63 Page:1268-1275
  • ISSN:0018-9499
  • Container-title:IEEE Transactions on Nuclear Science
  • language:
  • Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Davidovic Vojkan,Dankovic Danijel,Ilic Aleksandar,Manic Ivica,Golubovic Snezana,Djoric-Veljkovic Snexana,Prijic Zoran,Stojadinovic Ninoslav

Funder

Ministry of Education, Science and Technological Development of the Republic of Serbia

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Normalization Indicator of Ion-Induced Radiation Damage in Power VDMOS Transistors;IEEE Transactions on Nuclear Science;2024-08

2. Effect of Hydrogen Molecule Release on NBTI by Low-Temperature Pre-Treatment in P-Channel Power VDMOS Transistors;IEEE Transactions on Device and Materials Reliability;2024-06

3. Impact of Proton Irradiation at Different Temperatures on 100 V VDMOSFETs;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20

4. Short-term Recovery Effect in a Power Integrated Circuit Exposed to X-Rays;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16

5. Substrate noise evaluation for lightly doped 45nm N-MOSFET using physical simulation models;International Journal of Electronics;2023-02-20
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