Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements

Author:

Mu Yifei,Zhao Ce Zhou,Lu Qifeng,Zhao Chun,Qi Yanfei,Lam Sang,Mitrovic Ivona Z.,Taylor Stephen,Chalker Paul R.

Funder

National Natural and Science Foundation of China

platform promotion for Suzhou Municipal Key Lab “New Energy and Environmental Protection Techniques”

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate Dielectric Stacks for High Total Doses;IEEE Transactions on Device and Materials Reliability;2023-03

2. Radiation Sensor Design for Mitigation of Total Ionizing Dose Effects;Lecture Notes in Electrical Engineering;2022-12-01

3. Synergistic effects in MOS capacitors with an Au/HfO2–SiO2/Si structure irradiated with neutron and gamma ray;Journal of Physics D: Applied Physics;2021-12-15

4. Analysis of HfO2 Charge Trapping Layer Characteristics After UV Treatment;ECS Journal of Solid State Science and Technology;2021-04-01

5. Radiation-induced charge trapping in Si-MOS capacitors with HfO2/SiO2 gate dielectrics;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-09

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