First principles studies for electronic structure of β-Ga2O3 and GaAs
Author:
Affiliation:
1. Fudan University,Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology,Shanghai,China,200433
Funder
Technology Development
Fudan University
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10070854/10070925/10070929.pdf?arnumber=10070929
Reference28 articles.
1. Ultra-wide bandgap semiconductor Ga2O3 power diodes
2. Epitaxy of III-Nitrides on ?- Ga2O3 and Its Vertical Structure LEDs;weijiang;Micromachines (Basel),2019
3. Electronic and thermodynamic properties of β-Ga2O3
4. A review of Ga2O3 materials, processing, and devices;pearton;Applied Physics Reviews,2018
5. High-κ dielectric ε-Ga2O3 stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure
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