A Novel Monolithically Integrated Structure of GaN-based Micro-LED and its Driver HEMT-Reference-Cited by-同舟云学术

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A Novel Monolithically Integrated Structure of GaN-based Micro-LED and its Driver HEMT

Published:2021-12-06 Issue: Volume: Page:
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Container-title:2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)
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Author:

An Yuan,Ren Kailin,Xiu Xueying,Xu Zebin,Wu Zhuang,Yin Luqiao,Zhang Jianhua

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9675142/9675144/09675206.pdf?arnumber=9675206

Reference10 articles.

1. Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

2. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

3. High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal

4. Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling on Monolithic Integration Structure of AlGaN/InGaN/GaN High Electron Mobility Transistors and LEDs: 2DEG Density and Radiative Recombination;Electronics;2023-02-22

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