High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal-Reference-Cited by-同舟云学术

High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal

Published:2015-01-12 Issue:5 Volume:212 Page:1110-1115
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Li Z.¹,Waldron J.¹,Chowdhury S.¹,Zhao L.¹,Detchprohm T.¹,Wetzel C.¹,Karlicek R. F.¹,Chow T. P.¹

Affiliation:

1. Rensselaer Polytechnic Institute; Troy; NY 12180 USA

Funder

Engineering Research Centers Program (ERC) of the National Science Foundation under NSF Cooperative Agreement

New York State under NYSTAR

Cornell NanoScale Facility which is supported by NSF

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431660/fullpdf

Reference17 articles.

1. Solid-State Lighting: Toward Superior Illumination

2. Solid-state lamps with optimized color saturation ability

3. A High-Efficiency Dimmable LED Driver for Low-Power Lighting Applications

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