Performance and Reliability of 4 Mb eFLASH Memory Array Featuring 28 nm Split-Gate Cell with HKMG Select Transistor-Reference-Cited by-同舟云学术

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Performance and Reliability of 4 Mb eFLASH Memory Array Featuring 28 nm Split-Gate Cell with HKMG Select Transistor

Published:2020-05 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Memory Workshop (IMW)
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Author:

Jourba S.,Bollon N.,Decobert C.,Festes G.,Bertello B.,Zhou F.,Markov V.,Tkachev Y.,Kim J.,Ghazav P.,Liu X.,Do N.,Richter R.,Dunkel S.,Trentzsch M.,Zaka A.,Herrmann T.,Melde T.,Muller B.,Mauersberger F.,Bayha B.,Wittek S.,Duggan M.,Beyer S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9106715/9108108/09108118.pdf?arnumber=9108118

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure and Formation of Superflash Nonvolatile Memory Cells;Russian Microelectronics;2024-06

2. Performance and Reliability of Technology Qualified 34 Mb Split-Gate eFLASH Macro in 28 nm HKMG;2024 IEEE International Memory Workshop (IMW);2024-05-12

3. HfZrO_x Hybrid DRAM/FRAM Arrays Featuring Excellent Endurance and Low Latency;IEEE Electron Device Letters;2022-12

4. Fabrication and optimization of aggressively scaled Dual-Bit/Cell Split-Gate Floating-Gate flash memory cell in 55-nm node technology;Solid-State Electronics;2022-08

5. Influence of Common Source and Word Line Electrodes on Program Operation in SuperFlash Memory;Electronics;2021-02-01

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