The Design, Analysis, and Development of Highly Manufacturable 6-T SRAM Bitcells for SoC Applications-Reference-Cited by-同舟云学术

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The Design, Analysis, and Development of Highly Manufacturable 6-T SRAM Bitcells for SoC Applications

Published:2005-02 Issue:2 Volume:52 Page:218-226
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Venkatraman R.,Castagnetti R.,Kobozeva O.,Duan F.L.,Kamath A.,Sabbagh S.T.,Vilchis-Cruz M.,Liaw J.J.,You J.-C.,Ramesh S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/30185/01386591.pdf?arnumber=1386591

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Process monitoring using automatic physical measurement based on electrical and physical variability analysis;Journal of Micro/Nanolithography, MEMS, and MOEMS;2015-07-03

2. Characterizing the Capacitive Crosstalk in SRAM Cells Using Negative Bit-Line Voltage Stress;IEEE Transactions on Instrumentation and Measurement;2012-12

3. Variability aware low leakage reliable SRAM cell design technique;Microelectronics Reliability;2012-06

4. CMOS Leakage and Power Reduction in Transistors and Circuits: Process and Layout Considerations;Journal of Low Power Electronics and Applications;2012-01-27

5. A universal structure for SRAM cell characterization;2010 International Conference on Microelectronic Test Structures (ICMTS);2010-03

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