A Pure Analytic Method for Direct Extraction of Collector-Up HBT's Small-Signal Parameters-Reference-Cited by-同舟云学术

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A Pure Analytic Method for Direct Extraction of Collector-Up HBT's Small-Signal Parameters

Published:2004-12 Issue:12 Volume:51 Page:1972-1977
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Tseng H.-C.,Chou J.-H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/29867/01362955.pdf?arnumber=1362955

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An augmented small-signal model of InP HBT with its analytical-based parameter extraction technique;Microelectronics Journal;2022-03

2. Introduction;Research on the Radiation Effects and Compact Model of SiGe HBT;2017-10-24

3. Direct analytical parameter extraction for SiGe HBTs T-topology small-signal equivalent circuit;Superlattices and Microstructures;2016-06

4. Novel analytical parameter extraction for SiGe HBTs based on the rational function fitting;Superlattices and Microstructures;2015-04

5. Generic high-frequency small-signal look-up table model extraction for Si-Ge heterojunction bipolar transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2014-01-28

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