High-speed and low dark current InGaAs/InAlAs Avalanche Photodiodes with gradually-doped p-type absorption layers
Author:
Affiliation:
1. State key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications,Beijing,China,100876
Funder
National Key Research and Development Program of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9900493/9900919/09901069.pdf?arnumber=9901069
Reference8 articles.
1. Crosslight Device Simulation Software-General manual;programme;Gen Man,2012
2. Low-noise, low-jitter, high detection efficiency InGaAs/InP single-photon avalanche diode;tosi;IEEE J Sel Top Quantum Electron,2014
3. Non-local impact ionisation coefficients of submicron In0.52Al0.48As avalanche photodiodes
4. Ionization Rates for Electrons and Holes in Silicon
5. Extracting dark current components and characteristics parameters for InGaAs/InP avalanche photodiodes
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