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Extracting dark current components and characteristics parameters for InGaAs/InP avalanche photodiodes

  • Published:2016-05 Issue: Volume:76 Page:468-473
  • ISSN:1350-4495
  • Container-title:Infrared Physics & Technology
  • language:en
  • Short-container-title:Infrared Physics & Technology

Author:

Xu Jiao,Chen Xiaoshuang,Wang Wenjuan,Lu Wei

Funder

State Key Program for Basic Research of China

National Natural Science Foundation of China

Fund of Shanghai Science and Technology Foundation

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Dependence of dark current on carrier lifetime for InGaAs/InP avalanche photodiodes;Zeng;Opt. Quant. Electron.,2015

2. A study of InGaAs/InAlAs/InP avalanche photodiode;Krzysztof;Solid State Electron.,2015

3. Dark current transport and avalanche mechanism in HgCdTe electron-avalanche photodiodes;Qiu;IEEE Trans. Electron Dev.,2015

4. Single photon avalanche photodiodes;Campbell;Opt. Soc. Am.,2009

5. Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes;Kleinow;Infrared Phys. Technol.,2015

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