Non-local impact ionisation coefficients of submicron In0.52Al0.48As avalanche photodiodes
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207210802654430
Reference9 articles.
1. Impact ionization rates for electrons and holes in Al0.48In0.52As
2. Excess Avalanche Noise in $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$
3. Avalanche Multiplication in InAlAs
4. Avalanche multiplication in Al/sub x/Ga/sub 1-x/As (x=0 to 0.60)
5. High Gain $\times$ Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes
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1. High-speed and low dark current InGaAs/InAlAs avalanche photodiodes with P-type absorption layers;Optical and Quantum Electronics;2023-03-17
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3. Velocity enhancement in APDs with sub-100-nm multiplication region;Optics Communications;2015-07
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5. Nonlocal analysis to study of the impact ionization and avalanche characteristics of deep submicron Si devices;Solid State Communications;2011-04
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