13.56-MHz Class-E RF power amplifier using normally-on GaN HEMT
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7036020/7048466/07048621.pdf?arnumber=7048621
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Analysis and Design of Class-E Amplifier with Nonlinear Output Capacitance Model Using Sigmoid Function for GaN HEMT;IEEJ Journal of Industry Applications;2024-07-01
2. Simplified Class E Inverter for 13.56MHz Low Power Wireless Power Transfer Applications;2023 IEEE Wireless Power Technology Conference and Expo (WPTCE);2023-06-04
3. A novel high‐frequency floating resonant gate driver with reduced gate driving loss;IET Power Electronics;2022-07-03
4. A 2.5MHz High-Frequency Output Inverter Based on Frequency Multiplying Technique with a Multi-Core Transformer using Mn-Zn Ferrite Materials;IEEJ Journal of Industry Applications;2021-05-01
5. 2-port Characterization and Modeling of Magnetic Components for 10 MHz Class-E Inverters Design;IEEJ Transactions on Fundamentals and Materials;2021-05-01
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