A novel high‐frequency floating resonant gate driver with reduced gate driving loss
Author:
Affiliation:
1. Department of Electronic Science and Engineering Southeast University Nanjing China
Funder
National Natural Science Foundation of China
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/pel2.12326
Reference24 articles.
1. A Survey of Wide Bandgap Power Semiconductor Devices
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3. Zhang X. Sheh G. Ji I.H. Banerjee S.:In depth analysis of driving loss and driving power supply structure for SiC MOSFETs. In:2019 IEEE Applied Power Electronics Conference and Exposition (APEC).Anaheim CA pp.965–971(2019)
4. A Resonant MOSFET Gate Driver With Efficient Energy Recovery
5. A New Resonant Gate-Drive Circuit With Efficient Energy Recovery and Low Conduction Loss
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