Implementation of a short channel (0.3 μm) for 4H-SiC MOSFETs with deep P-well using ‘channeling’ implantation-Reference-Cited by-同舟云学术

Implementation of a short channel (0.3 μm) for 4H-SiC MOSFETs with deep P-well using ‘channeling’ implantation

Published:2022-05-22 Issue: Volume: Page:
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Container-title:2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Kim Dongyoung¹,Jang Seung Yup¹,Morgan Adam J.¹,Sung Woongje¹

Affiliation:

1. State University of New York Polytechnic Institute,Albany,NY,USA,12203

Funder

Office of Energy Efficiency and Renewable Energy

U.S. Department of Energy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813633.pdf?arnumber=9813633

Reference9 articles.

1. Effective Channel Mobility in Epitaxial and Implanted 4H-SiC Lateral MOSFETs

2. 4.3 m?cm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET;harada;Mater Sci Forum,2006

3. Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation

4. An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs

5. P-Type and N-Type Channeling Ion Implantation of SiC and Implications for Device Design and Fabrication;das;Transactions of The Electrochemical Society,2020

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