Hybrid GaN-SiC Power Switches for Optimum Switching, Conduction and Free-Wheeling Performance
Author:
Affiliation:
1. Kyushu Institute of Technology,Kitakyushu,Japan
2. Kyoto University of Advanced Science,Nagamori Institute of Actuators,Kyoto,Japan
3. Kyoto University of Advanced Science,Solid-State Power Processing (SP2) Lab,Kyoto,Japan
Funder
Japan Society for the Promotion of Science
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813667.pdf?arnumber=9813667
Reference6 articles.
1. Reducing reverse conduction and switching losses in GaN HEMT-based high-speed permanent magnet brushless dc motor drive
2. 600 V normally-off p-gate GaN HEMT based 3-level inverter
3. Gate drive solutions for CoolGaN™ GIT HEMTs, Exploiting the full potential of GaN;varajao;Infineon,2021
4. A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs
5. Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling
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