Reducing reverse conduction and switching losses in GaN HEMT-based high-speed permanent magnet brushless dc motor drive-Reference-Cited by-同舟云学术

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Reducing reverse conduction and switching losses in GaN HEMT-based high-speed permanent magnet brushless dc motor drive

Published:2017-10 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Lee Woongkul,Han Di,Choi Wooyoung,Sarlioglu Bulent

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8085404/8095743/08096628.pdf?arnumber=8096628

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dead-Time Evaluation With Switching Frequency for GaN-Based Non-Inverting Buck-Boost DC–DC Converter Using FPGA-Based High-Frequency Control;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-02

2. Fast Switching of GaN Transistors using a Boosted Gate Voltage;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

3. The I_D Instability Induced by Reverse Conduction Stress in p-GaN Gate HEMTs;IEEE Electron Device Letters;2023-08

4. Hybrid-flyback and GaN enable ultra-high power density 240W USB-PD EPR adaptor;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19

5. A Three-Level GaN Driver for High False Turn-ON Tolerance With Minimal Reverse Conduction Loss;IEEE Open Journal of Power Electronics;2023

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