Investigation of Leakage Current Degradation Mechanism under Heavy Ions Irradiation in SiC Junction Barrier Schottky Diodes-Reference-Cited by-同舟云学术

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Investigation of Leakage Current Degradation Mechanism under Heavy Ions Irradiation in SiC Junction Barrier Schottky Diodes

Published:2022-10-03 Issue: Volume: Page:1-5
ISSN:
Container-title:2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Author:

Luo Maojiu¹,Zhang Yourun¹,Yan Xiaoyu²,Fan Xue³

Affiliation:

1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering,Chengdu,P.R.China

2. Institute of Modern Physics, Chinese Academy of Sciences (CAS),Lanzhou,China,730000

3. Chengdu Technological University,Chengdu,P.R.China

Funder

Science Challenge Project

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10412245/10412349/10412489.pdf?arnumber=10412489

Reference14 articles.

1. Design, fabrication, and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers

2. Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

3. Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

4. Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

5. Schottky Barrier Characteristic Analysis on 4H-SiC Schottky Barrier Diodes With Heavy Ion-Induced Degradation

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