Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes-Reference-Cited by-同舟云学术

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Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

Published:2016-09 Issue: Volume: Page:
ISSN:
Container-title:2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Author:

Javanainen Arto,Galloway Kenneth F.,Nicklaw Christopher,Turowski Marek,Ferlet-Cavrois Veronique,Bosser Alexandre,Lauenstein Jean-Marie,Pintacuda Francesco,Reed Robert A.,Schrimpf Ronald D.,Weller Robert A.,Virtanen A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8082474/8093090/08093100.pdf?arnumber=8093100

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Leakage Current Degradation Mechanism under Heavy Ions Irradiation in SiC Junction Barrier Schottky Diodes;2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS);2022-10-03

2. A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile;IEEE Journal of the Electron Devices Society;2021

3. Single-Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices;IEEE Transactions on Electron Devices;2020-10

4. Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence;IEEE Transactions on Nuclear Science;2017

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