Schottky Barrier Characteristic Analysis on 4H-SiC Schottky Barrier Diodes With Heavy Ion-Induced Degradation
Author:
Affiliation:
1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/9758990/09737106.pdf?arnumber=9737106
Reference29 articles.
1. Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
2. Displacement damage-induced catastrophic second breakdown in silicon carbide Schottky power diodes
3. Heavy ion radiation and temperature effects on SiC schottky barrier diode
4. Recrystallization effects of swift heavy 209 Bi ions irradiation on electrical degradation in 4H-SiC Schottky barrier diode
5. Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout
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