Author:
Volkov N.A.,Andreev A.Yu.,Yarotskaya I.V.,Ryaboshtan Yu.L.,Svetogorov V.N.,Ladugin M.A.,Padalitsa A.A.,Marmalyuk A.A.,Slipchenko S.O.,Lyutetskii A.V.,Veselov D.A.,Pikhtin N.A.
Abstract
Abstract
Semiconductor lasers based on AlGaInAs/InP heterostructures with a strongly asymmetric waveguide are studied. It is shown that the use of such a waveguide simultaneously with an increased quantum well energy depth provides conditions for increasing the output laser power. The semiconductor AlGaInAs/InP lasers based on a strongly asymmetric waveguide with a stripe contact width of 100 μm demonstrated an output optical power of 5 W (pump current 11.5 A) in a continuous-wave regime and 19 W (100 A) in a pulsed regime (100 ns, 1 kHz) at a wavelength of 1450 – 1500 nm at room temperature. The obtained data are compared with the output characteristics of lasers based on a symmetric waveguide.
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials
Cited by
5 articles.
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