Photoluminescence and photoreflectance studies on δ-Doped In0.15Ga0.85As/GaAs quantum wells-Reference-Cited by-同舟云学术

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Photoluminescence and photoreflectance studies on δ-Doped In0.15Ga0.85As/GaAs quantum wells

Published:1994-04 Issue:3 Volume:15 Page:333
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Ceschin A.Marti,Quivy A.A.,Soares J.A.N.T.,Enderlein R.,Tabata A.,Scolfaro L.M.R.,da Silva E.C.F.,Leite J.R.,Oliveira J.B.B.,Meneses E.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction;Solar Energy Materials and Solar Cells;2023-06

2. Observation of indium segregation effects in structural and optical properties of pseudomorphic HEMT structures;Semiconductor Science and Technology;2005-12-21

3. Surface photovoltage spectroscopy characterization of the GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles;Physica E: Low-dimensional Systems and Nanostructures;2002-05

4. Lineshape analysis of photoreflectance spectra from InGaAs/GaAs quantum wells;Superlattices and Microstructures;1999-10

5. Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles;Journal of Applied Physics;1999-06-15

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