Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370664
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2. Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures;Semiconductors;2011-05
3. Comparison of two-dimensional electron gas of etched and unetched InAlAs/InGaAs/InAlAs metamorphic high electron mobility transistor structures;Physica E: Low-dimensional Systems and Nanostructures;2010-02
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