Spectroscopic ellipsometry of Si1-xGex multi-quantum wells-Reference-Cited by-同舟云学术

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Spectroscopic ellipsometry of Si1-xGex multi-quantum wells

Published:1993-09 Issue:2-3 Volume:14 Page:157-165
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Carline R.T.,Pickering C.,Calcott P.,Robbins D.J.,Leong W.Y.,Pitt A.D.,Barnett S.J.,Cullis A.G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectroscopic ellipsometry study of a self-organized Ge dot layer;Journal of Applied Physics;2003-08-15

2. Strain and Ge concentration determinations in SiGe/Si multiple quantum wells by transmission electron microscopy methods;Journal of Applied Physics;2003-04

3. Real-time spectro-ellipsometric characterization of Si/Si[sub 1−x]Ge[sub x] multiple quantum wells grown on Si(100) substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002

4. Thin film epitaxy on Si for microelectronics;Advanced Microelectronic Processing Techniques;2000-10-24

5. Observation of graded interfaces in strained Si/Si 1−x Ge x layers (0.17 < x < 0.23) using photoreflectance;Applied Surface Science;1998-01

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