Aδ-doped In0.24Ga0.76As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer-Reference-Cited by-同舟云学术

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Aδ-doped In0.24Ga0.76As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer

Published:2001-05 Issue:5 Volume:29 Page:329-334
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Lee Ching-Sung,Hsu Wei-Chou,Li Sheng San,Ho Pin

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Current transport in modulation doped (Al,Ga)As/GaAs heterostructures: Applications to high speed FET's

2. Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained‐layer superlattices

3. A Study of Layer Thickness and Interface Qualities of Strained InxGa1-xAs/GaAs Layers

4. Delta- (°-) doping in MBE-grown GaAs: Concept and device application

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-strain InGaAs/GaAs quantum well grown by MOCVD;Chinese Optics Letters;2014

2. The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods;Journal of Crystal Growth;2008-05

3. A novel GaAs FET with double camel-like gate structure;IEEE Electron Device Letters;2005-07

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