The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
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3. Experimental Detection on Thickness Fluctuation of InxGa1-xAs-Based Indium-Rich Cluster Structure;IEEE Photonics Journal;2022-12
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