A Study of Layer Thickness and Interface Qualities of Strained InxGa1-xAs/GaAs Layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. MOVPE Processes;Design and Realization of Novel GaAs Based Laser Concepts;2012
2. Bias-Tunable Multiple-Transconductance with Improved Transport Characteristics of δ-doped In0.28Ga0.72As/GaAs/In0.24Ga0.76As/GaAs High Electron Mobility Transistor Using a Graded Superlattice Spacer;Japanese Journal of Applied Physics;2003-04-15
3. High electric field performance of Al0.3Ga0.7As/GaAs and Al0.3Ga0.7As/GaAs/In0.3Ga0.7As quantum well micro-Hall devices;Sensors and Actuators A: Physical;2002-09
4. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces;Journal of Applied Physics;2001-09
5. Aδ-doped In0.24Ga0.76As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer;Superlattices and Microstructures;2001-05
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