Carrier conduction in a Si-nanocrystal-based single-electron transistor-II. Effect of drain bias

Author:

Fu Y.,Willander M.,Dutta A.,Oda S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Single-electron memory using carrier traps in a silicon nitride layer;Sunamura;Appl. Phys. Lett.,1999

2. Si single-electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process;Nakajima;J. Vac. Sci. Technol. B (Microelectronics and Nanometer Structures),1999

3. A concept for a submillimeter-wave single-photon counter;Schoelkopf;IEEE Trans. Appl. Supercond.,1999

4. Single-electron logic and memory devices;Korotkov;Int. J. Electron.,1999

5. A new design scheme for logic circuits with single electron transistors;Uchida;Jpn. J. Appl. Phys. Part 1,1999

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3. Characterization of Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots;Japanese Journal of Applied Physics;2013-04-01

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