Single-electron memory using carrier traps in a silicon nitride layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124159
Reference9 articles.
1. Room-temperature single-electron memory
2. A silicon nanocrystals based memory
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4. Room temperature operation of Si single-electron memory with self-aligned floating dot gate
5. Single-electron transistors fabricated from a doped-Si film in a silicon-on-insulator substrate
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1. Second harmonic generation analysis in hydrogenated amorphous silicon nitride thin films;Applied Physics Letters;2007-01-08
2. Influence of substrate temperature on the properties of fluorinated silicon-nitride thin films deposited by IC-RPECVD;Journal of Electronic Materials;2006-07
3. Electric-field-dependent spectroscopy of charge motion using a single-electron transistor;Applied Physics Letters;2006-05-22
4. Toward Long-Term Retention-Time Single-Electron-Memory Devices Based on Nitrided Nanocrystalline Silicon Dots;IEEE Transactions On Nanotechnology;2004-03
5. Single electron memory devices: Toward background charge insensitive operation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
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