Author:
Zhang Xian-Gao ,Fang Zhong-Hui ,Chen Kun-Ji ,Qian Xin-Ye ,Liu Guang-Yuan ,Xu Jun ,Huang Xin-Fan ,He Fei ,
Abstract
The tunable single electron effect and Coulomb oscillations were observed in Si nanowire transistors. By measuring the channel current as function of applied back-gate and side-gate voltage, the tunable single electron effect and Coulomb oscillations are investigated. From the differential conductance characteristics, the Coulomb diamonds are clearly observed due to the gate voltage-induced quantum dots formation in the Si nanowire.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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